Nexperia PBHV8115Z115 Bipolar (BJT) Single Transistor NPN 150 V 30 MHz 700 mW 1 A 250 hFE

In stock

The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink. High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Hig

$82.89 $41.45

Category:
Share :

The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.

  • High voltage
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • AEC-Q101 qualified
  • PNP complement is PBHV9115Z
  • V8115Z Marking code

Applications

Industrial, Lighting, Automotive, Motor Drive & Control, Communications & Networking, Power Management

Other details

Brand NEXPERIA Part Number PBHV8115Z,115 Quantity Each (Supplied on Cut Tape) Technical Data Sheet EN Application Note EN

All product and company names are trademarks or registered trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Reviews

There are no reviews yet.

Be the first to review “Nexperia PBHV8115Z115 Bipolar (BJT) Single Transistor NPN 150 V 30 MHz 700 mW 1 A 250 hFE”

Your email address will not be published. Required fields are marked *

Related products