Nexperia PBHV8115Z115 Bipolar (BJT) Single Transistor NPN 150 V 30 MHz 700 mW 1 A 250 hFE
The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink. High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Hig
The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- AEC-Q101 qualified
- PNP complement is PBHV9115Z
- V8115Z Marking code
Applications
Industrial, Lighting, Automotive, Motor Drive & Control, Communications & Networking, Power Management
Other details
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