The IKP15N60T is a Low Loss IGBT in TrenchStop and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

• Lowest Vce (sat)drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft, fast recovery anti-parallel emitter controlled HE diode
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency – Low conduction and switching losses
• High device reliability
• 5s Short-circuit withstand time
• Green product
• Halogen-free

Applications

Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial

Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand INFINEON Part Number IKP15N60TXKSA1 Quantity Each Technical Data Sheet EN Application Note EN Simulation Model EN

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